FDMA1023PZ Dual P Channel MOSFET -20V -3.7A 72mΩ
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High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET -20V , -3.7A, 72mΩ High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET -20V , -3.7A, 72mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-......
Sunbeam Electronics (Hong Kong) Limited
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Beijing Silk Road Enterprise Management Services Co.,LTD
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Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities
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Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.......
Shenzhen Sai Collie Technology Co., Ltd.
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Anterwell Technology Ltd.
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
ChongMing Group (HK) Int'l Co., Ltd
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D2003UK Dual N Channel MOSFET Transistor 1A 65V 5 Pin Logic Ics
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D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:......
Shenzhen Kaigeng Technology Co., Ltd.
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PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package
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... ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Specification Of PMDXB600UNE Product Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss)...
ShenZhen Mingjiada Electronics Co.,Ltd.
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FDC608PZ MOSFET -20V P-Channel 2.5V PowerTrench MOSFET N And P Mosfet
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...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 ......
Wisdtech Technology Co.,Limited
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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
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FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage......
Shenzhen Hongxinwei Technology Co., Ltd
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