650v Sic Mosfet High Voltage Device TO-220AC For Electronics Tool
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Durability Silicon Carbide MOSFET High Voltage Device For Electronics Tool *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ......
Guangdong Lingxun Microelectronics Co., Ltd
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TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power
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TO-263-8 IMBG65R048M1H Silicon Carbide MOSFETs Transistors 650V SiC Trench Power Product Description Of IMBG65R048M1H IMBG65R048M1H is 650V CoolSiC M1 SiC Trench Power Device, Surface Mount. Specification Of IMBG65R048M1H Part Number IMBG65R048M1H FET ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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SSTH Series Digital Inverters Clean Energy for Electronics, Tools & Appliances
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SSTH Series Digital Inverters - Clean Energy for Electronics, Tools & Appliances Why Professionals Choose ST Series Military-Grade Components - Industrial-grade capacitors and MOSFETs ensure longevity Adaptive Cooling Technology - Variable-speed fans ......
Shenzhen ShengShi TianHe Electronic Technology Co., Ltd.
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N-Ch 650V 47A Mosfet Transistor High Efficiency TO247-3 CoolMOS C3 SPW47N60C3
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Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy......
Shenzhen Hongxinwei Technology Co., Ltd
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T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS
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T4 Series 4A TRIACS Main Features Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 5 to 35 mA DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC ......
Anterwell Technology Ltd.
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T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS
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T4 Series 4A TRIACS Main Features Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 5 to 35 mA DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC ......
ChongMing Group (HK) Int'l Co., Ltd
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650V Silicon Carbide Power Mosfet Multifunctional Durable N Channel
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Product Description: The Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, high frequency device that is based on the national military standard production line. Its material is silicon carbide, making it a ......
Reasunos Semiconductor Technology Co., Ltd.
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High Power MOSFET NVH4L027N65S3F SUPERFET III MOSFET 650V 27mohm
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... for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a solid team for...
Sunbeam Electronics (Hong Kong) Limited
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NTB082N65S3F MOSFET Power Electronics D²PAK Package N‐Channel 650V 40A 82m for the various power system
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NTB082N65S3F MOSFET Power Electronics D²PAK Package N‐Channel 650V 40A 82m for the various power system FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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Mosfet MOSFT Transistor IC KIA4N65 4N65 650V TO-220F MOSFET Electronic Component Integrated Circuits
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Product Description Technology MOSFET Voltage 650V Mounting Type Through Hole Package TO-220F Yonlanda Skype: qyt-yolanda1 Email: yonlandasong(at)quanyuantong.net...
Shenzhen Quanyuantong Electronics Co., Ltd.
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