Yellow Black Fe2O3 LiTaO3 Wafer
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...Fe2O3-LiTaO3 Wafer 3'' 4'' 6'' Doped used for Photorefractive Applications By doping different concentrations of Fe2O3 in LiTaO3 crystal, Fe doped congruent LiTaO3 were grown by Czochralski method. Test results show that the lattice constant increases with the increase of Fe2O3 content. This result indicates a better Photorefractive property of Fe:LiTaO3 than undoped LiTaO3. BonTek is capable of providing such doped LiTaO3 wafers...
Hangzhou Freqcontrol Electronic Technology Ltd.
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Yellow Black Fe2O3 Doped LiTaO3 Wafer Used For Photorefractive
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... damage threshold. Fe doped congruent LiTaO3 were grown by Czochralski method. By doping different concentrations of Fe2O3 in LiTaO3 crystal, Test results show that the lattice constant increases with the increase of Fe2O3 content. This result indicates a...
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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Test Grade Monocrystalline Silicon Wafer , High Resistivity Silicon Wafer
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... wafer, single side polished silicon wafer 1. Description Density 2.4(g/cm3) Dope type no dope doped B doped P Type I P N resistivity Ø 1000Ωcm 10-3~40Ωcm 10-3~40Ωcm E P D ≤100∕cm2 ≤100∕cm2 ≤100∕......
SHANGHAI FAMOUS TRADE CO.,LTD
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8inch 12inch 4H-N Type SiC Wafer Thickness 500±25um 1000±50 N Doped Dummy Prime Research Grade
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...Wafer thickness 500±25um n doped dummy prime research grade 8inch 12inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8-inch 12-inchH-N type silicon carbide (SiC) wafer intended for semiconductor applications. The wafer, with a thickness of 500±25 µm, was fabricated using state-of-the-art techniques and is doped......
SHANGHAI FAMOUS TRADE CO.,LTD
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4" Silicon Epitaxial Wafer Top Layer Instrinct Silicon Layer / Phosphorus Doped Layer Ion Implantation Layer Silicon Sub
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...o a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Conductive Nb Doped SrTiO3 Wafer Technical Ceramic Parts 5 X 5 Mm Diameter 25Mm
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SrTiO3 Wafer and conductive Nb doped SrTiO3 wafer with size from 5 x 5 mm to diameter 25 mm We can provide both single crystal SrTiO3 wafer and conductive Nb doped SrTiO3 wafer with size from 5 x 5 mm to diameter 25 mm . With excellent physical and ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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M10 Wafer Solar Panel For Ultra Large Power Plant Superior Module 555W 144 Half Cell
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...wafer Solar Panel for ultra-large power plant or distributed projects superior module efficiency 555W 144 half cell MONO-FACIAL MODULE P-Type /Positive power tolerance of 0~+3%/Max module efficiency 21.48% 1. Suitable for ground power plantsand distributed projects 2. Advanced module technology deliverssuperior module efficiency Gallium-doped Wafer......
Beijing MITSCN Co., Ltd.
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Tungsten And Molybdenum Products Ion Implantation Source
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... dope wafers with foreign atoms to modify material properties such as conductivity or crystal structure. The beam path is the center of an implanter system. Here the ions are generated, concentrated, greatly accelerated, and focused on the wafer at very......
JINXING MATECH CO LTD
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Semiconductor Ion Implanted Tungsten Molybdenum Precision Parts Ion Source Assembly
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...be doped into electrons, then accelerate and collide with the semiconductor wafer. Tungsten and molybdenum are usually used to make Ion implantation parts. Molybdenum ion implanted parts, tungsten ion implanted parts, tungsten molybdenum ......
Zhengzhou Sanhui Refractory Metal Co., Ltd.
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400W 24V Solar Power Systems For Off Grid
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FSM380~FSM390M72L (380W/385W/390W) 72 Cells Typical Mono PERC Solar Panels Material & Craft Descriptions Mono PERC solar cells from gallium doped wafers to guarantee higher output power and higher module efficiency. Excellent Anti-PID performance guarantee......
wuxi finergy tech co,.ltd
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