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fet power transistor 20v

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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

China 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge on sale
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery protection Load switch Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

China 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge on sale
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery protection Load switch Power......
Beijing Silk Road Enterprise Management Services Co.,LTD

NTTFS3A08PZTAG Transistor IC Chip FETs Single P Channel Power Mosfet 20V 9A 8WDFN

China NTTFS3A08PZTAG Transistor IC Chip FETs Single P Channel Power Mosfet 20V 9A 8WDFN on sale
...Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power......
Shenzhen Res Electronics Limited

Address: B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China

AON7421 MOSFET Power Electronics FETs MOSFETs Transistors P-CH 20V 30A Package 8-DFN-EP

China AON7421 MOSFET Power Electronics FETs MOSFETs Transistors P-CH 20V 30A  Package 8-DFN-EP on sale
AON7421 MOSFET Power Electronics FETs MOSFETs Transistors P-CH 20V 30A Package 8-DFN-EP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

N Channel IPP65R190CFD7A Single FETs MOSFETs Transistors TO-220-3 Integrated Circuit Chip

China N Channel IPP65R190CFD7A Single FETs MOSFETs Transistors TO-220-3 Integrated Circuit Chip on sale
...FETs MOSFETs Transistors TO-220-3 Integrated Circuit Chip​ Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specification Of IPP65R190CFD7A Part Number IPP65R190CFD7A Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V Power......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

SI2399DS Transistor SI2399DS-T1-GE3 P-Channel MOSFET Transistor 20V 6A SOT-23

China SI2399DS Transistor SI2399DS-T1-GE3 P-Channel MOSFET Transistor 20V 6A SOT-23 on sale
...FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 34 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 835pF @ 10V Power...
Shenzhen Quanyuantong Electronics Co., Ltd.

Address: Rm18 B, Block A, Duhui100 Zhonghang Road ,Futian District,Shenzhen China

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

China RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet on sale
... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

High Power MOSFET NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V 1.3A 0.21Ω

China High Power MOSFET NDS331N
 N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V 1.3A 0.21Ω
 on sale
... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting....
Sunbeam Electronics (Hong Kong) Limited

Address: Internatinal Logistics Center A-702, No. 1 South China Road, ShenZhen, China

Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS

China Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS on sale
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

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