FMM5061 L-Band Medium & High Power GaAs FET FUJITSU RF Power Transistors SMD
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FMM5061 is a L-Band Medium & High Power GaAs FET. Part NO: FMM5061 Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited
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N Channel 175 MOhm Typ Mosfet Power Transistor SMD / SMT Installation HV Package
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Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines......
Shenzhen Weitaixu Capacitor Co.,Ltd
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Reliable Quality High Power MOSFET for Solar Inverter and DC/DC Converter Applications
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...Power MOSFET is a cutting-edge semiconductor device designed to meet the demanding requirements of modern electronic applications. As a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), this product boasts exceptional performance characteristics that make it an ideal choice for high power and high efficiency systems. With its low on resistance and robust power handling capabilities, the High Power......
Reasunos Semiconductor Technology Co., Ltd.
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HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
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... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ......
Shenzhen Sai Collie Technology Co., Ltd.
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
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... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ......
Anterwell Technology Ltd.
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
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...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD
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IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V
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...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor...
Walton Electronics Co., Ltd.
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