PTFB181702FC-V1-R0
|
...V1-R0 Overview\\nPTFB181702FC-V1-R0 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have PTFB181702FC-V1-R0......
Rozee Electronics Co., Ltd
|
GTRA364002FC-V1-R0
|
... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ......
Beijing Silk Road Enterprise Management Services Co.,LTD
|
HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
|
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ......
Shenzhen Sai Collie Technology Co., Ltd.
|
RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
|
... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ......
Anterwell Technology Ltd.
|
RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
|
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
|
Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
|
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
RF Power Transistors MRF136 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FETs
|
Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ......
Mega Source Elec.Limited
|
Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
|
...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
PTVA101K02EV-V1-R0
|
RF Mosfet 50 V 150 mA 1.03GHz ~ 1.09GHz 21dB 900W H-36275-4...
KANG DA ELECTRONICS CO.
|
Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor
|
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
Submit your “fet power transistor v1 r0” inquiry in a minute :