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Fets Mosfets High Performance Transistor

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fets mosfets high performance transistor

from 153 Products

FDA38N30 MOSFET Power Electronics TO-3P-3 N-Channel 30V 38A 1.7Ohm High Performance Transistor

China FDA38N30 MOSFET Power Electronics TO-3P-3 N-Channel  30V 38A  1.7Ohm High Performance Transistor on sale
FDA38N30 MOSFET Power Electronics TO-3P-3 N-Channel 30V 38A 1.7Ohm High Performance Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300 V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

FZT653TA Power Mosfet Transistor Npn Silicon Planar High Performance Transistor

China FZT653TA Power Mosfet Transistor Npn Silicon Planar High Performance Transistor on sale
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FEATURES * Low saturation voltage COMPLEMENTARY TYPE— FZT753 PARTMARKING DETAIL— FZT653 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection

China 700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With  Integrated ESD Protection on sale
...
VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

China RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet on sale
... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor

China Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor on sale
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor

China Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor on sale
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

China IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET on sale
... Hole TO-220AB Specification: Category Discrete Semiconductor Products   Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.

Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province

Surface Mount NTBG040N120SC1 N-Channel 60A Single FETs MOSFETs Transistors

China Surface Mount NTBG040N120SC1 N-Channel 60A Single FETs MOSFETs Transistors on sale
... Vgs(th) (Max) @ Id 4.3V @ 10mA Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V Features Of Transistors Typ. RDS(on)= 40 m...
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

China FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance on sale
FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

17a 55v 45w High Power Transistor Surface Mount IRFR024NTRPBF D Pak N Channel

China 17a 55v 45w High Power Transistor Surface Mount IRFR024NTRPBF D Pak N Channel on sale
...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet transistor......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

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