AO4441 MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC
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AO4441 MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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Integrated Circuit Chip IMZ120R140M1H Single FETs MOSFETs Transistors TO-247-4
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... is TO-247-4, Through Hole. Specification Of IMZ120R140M1H Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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ISO9001 Metal Oxide Semiconductor Fet Mosfet Transistor Multi Function
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Low On Resistance High Power MOSFET Stable Process Reliable Quality *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {......
Reasunos Semiconductor Technology Co., Ltd.
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ......
Anterwell Technology Ltd.
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ......
Angel Technology Electronics Co
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FQP17N40 17N40 170W N Channel MOSFET Transistor 400V 16A TO-220
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...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 270mOhm @ 8A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET......
Shenzhen Quanyuantong Electronics Co., Ltd.
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STW9N150 Single FETs MOSFET IC N-Channel 1500V 8A TO247-3
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STW9N150 MOSFET N-CH 1500V 8A TO247-3 Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr STMicroelectronics Series PowerMESH™ Package Tube Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ......
J&T ELECTRONICS LTD
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STD2NK60Z-1 Field Effect Transistor Transistors FETs MOSFETs Single
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...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V Vgs (Max) - FET......
KZ TECHNOLOGY (HONGKONG) LIMITED
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