FGA25N120ANTD Power Switching IGBT Power Transistor 1200V 40A 310W TO3P
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FGA25N120ANTD Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as ......
Shenzhen Retechip Electronics Co., Ltd
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FGA25N120ANTD Integrated Circuit Components IGBT NPT Trench 1200V 50A 312W Through Hole TO-3P
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FGA25N120ANTD IGBT NPT and Trench 1200V 50A 312W Through Hole TO-3P IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A ......
Shenzhen Koben Electronics Co., Ltd.
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FGA25N120ANTD TO-3P NPT Trench IGBT 25A 1200V
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FGA25N120ANTD # TO-3P NPT Trench IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
ChongMing Group (HK) Int'l Co., Ltd
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FGA25N120ANTD
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...IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “......
Beijing Silk Road Enterprise Management Services Co.,LTD
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Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
Anterwell Technology Ltd.
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FGA25N120ANTD TO-3P NPT Trench IGBT 25A 1200V
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FGA25N120ANTD # TO-3P NPT Trench IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock
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Product Detail Packaging Tube Part Status Active IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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