GANE350-700BBAZ GaN IC High Power Density 700V 350 mOhm GaN FET Transistor
|
GANE350-700BBAZ GaN IC High Power Density 700V 350 mOhm GaN FET Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
High Power MOSFET NVMFS5113PL 60V 64A 14 mOhm Single P-Channel SO8-FL Logic Level
|
... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has...
Sunbeam Electronics (Hong Kong) Limited
|
D478 IC AOD478 N-Channel MOSFET 100V 2.5A TO-252 SOT252 MOS FET Transistor Original
|
Product Detail Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds......
Shenzhen Quanyuantong Electronics Co., Ltd.
|
FDS6898A Field Effect Transistor Transistors FETs MOSFETs Arrays
|
FDS6898A Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.4A Rds On (Max) @ Id, Vgs 14 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA ......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
|
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low ......
Shenzhen Sai Collie Technology Co., Ltd.
|
FDV303N Digital FET N-Channel MOSFET N-CH 25V 680MA SOT23 RF Transistors
|
...FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 25 V Id - Continuous Drain Current: 680 mA Rds On - Drain-Source Resistance: 450 mOhms......
Wisdtech Technology Co.,Limited
|
Through Hole High Power Transistor , AOTF14N50 N Channel Mosfet N-CH 500V 14A TO220F
|
Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK
|
...) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)...
Shenzhen Koben Electronics Co., Ltd.
|
DMN10H220L-7 MOSFET 100V N Ch Enh FET 16Vgs 1.6A 1.3W
|
...: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 1.6 A Rds On - Drain-Source Resistance: 220 mOhms Vgs - Gate-Source Voltage: - 16 V,...
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
|
2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor
|
|
Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package L6599D 6828 ST 13+ SOP-16 L7805ABP 12978 ST 11+ TO-220F L7812CV 60000 STM 14+ TO-220 L78L33ACUTR 38000 ST 15+ SOT-89 L78M05CDT 98000 ST 16+ TO-252 L78M08ABDT-TR 14698 ST 16+ SOT-252 L78M12CDT ......
Anterwell Technology Ltd.
|
