IMZA120R014M1HXKSA1 GaN IC 1200V Gan Fet Transistor 14mohm SiC Trench MOSFET TO247
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Transistors IMZA120R014M1HXKSA1 1200V 14mΩ SiC Trench MOSFET TO247 package Description The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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AUIRGDC0250 Programmable IC Chips IGBT Transistor IC 1200V
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AUIRGDC0250 Electronic Components IC Chips Programmable IC Chips Infineon PRODUCT DESCRIPTION Part number # AUIRGDC0250 is manufactured by Infineon Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry......
Hong Kong Jia Li Xin Technology Limited
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QPA2933 Integrated Circuits ICs , Rf Power Amplifier Ic 3.3GHz 60W GaN PA OVM
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QPA2933 RF Amplifier 2.9-3.3GHz 60W GaN PA OVM Qorvo QPA2933 S-Band 60W GaN Power Amplifier Qorvo QPA2933 S-Band 60W GaN Power Amplifier is optimized for 2.9GHz to 3.3GHz, delivering 48.8dBm of saturated output power and 28dB of large-signal gain while ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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FGA25N120ANTD Integrated Circuit Components IGBT NPT Trench 1200V 50A 312W Through Hole TO-3P
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...) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W Switching Energy 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge ......
Shenzhen Koben Electronics Co., Ltd.
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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...1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V......
ChongMing Group (HK) Int'l Co., Ltd
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100W GaN Fast Charger 2 PD 1.5A QC3.0 USB Charger
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...GAN 2 PD And 1 QC Port Travel Adapter USB-C PD QC3.0 Usb Phone Laptop Fast Multi Charger Features: (1) Energy-efficient, built-in precise component; (2) Pocket size, compact, lightweight, durable; (3) High-quality fire-resistant&high temperature-resistant material; (4) Input voltage range that complies with the global using standard; (5) Adaptive fast-charging charger, keep your cellphone ever power on; (6) Built-in Intelligent IC...
Shenzhen Xishen Development Co., Ltd.
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IKW25T120 Through Hole IGBT Transistor IC Chip LOW LOSS DuoPack 1200V 25A
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IKW25T120 Through Hole IGBT Transistors LOW LOSS DuoPack 1200V 25A ●Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D ●Short circuit withstand time – 10s ●Designed for : - Frequency Converters - Uninterrupted Power Supply ●TrenchStop......
Walton Electronics Co., Ltd.
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ZHL-100W-GAN+
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The ZHL-100W-GAN+,from Mini-Circuits,is Instrumentation Amplifiers.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ......
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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41FVX-RSM1-GAN-ETF
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... Circuits - ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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1200V 75A PIM Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver
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1200V 75A PIM Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver 7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Features . Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic ......
Anterwell Technology Ltd.
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