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high performance fets mosfets

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IRFHM830TRPBF MOSFET Power Electronics High-Performance Power MOSFET Transistor

China IRFHM830TRPBF MOSFET Power Electronics High-Performance Power MOSFET Transistor on sale
Product Description: 1. N-Channel MOSFET for high frequency switching applications 2. Low gate charge and fast switching speed 3. Low on-resistance and high current handling capability 4. High Avalanche Energy and ESD protection 5. RoHS Compliant and Pb-......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Heatproof High Voltage SiC Mosfet , Multipurpose N Channel Fet Transistor

China Heatproof High Voltage SiC Mosfet , Multipurpose N Channel Fet Transistor on sale
...High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range of applications. It offers excellent characteristics in high......
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

China RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet on sale
... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

24A 110W Single FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip

China 24A 110W Single FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip on sale
...FETs MOSFETs Transistors IMBG65R107M1H Integrated Circuit Chip Product Description Of IMBG65R107M1H IMBG65R107M1H provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge. Specification Of IMBG65R107M1H Part Number: IMBG65R107M1H Channels: 1 Vds: 650 V Rds On: 42 MOhms Id: 63 A Vgs Th: 5.7 V Benefits Of​ IMBG65R107M1H Unique combination of high performance, high...
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK

China High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK on sale
... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

China IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET on sale
... Hole TO-220AB Specification: Category Discrete Semiconductor Products   Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.

Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province

STW9N150 Single FETs MOSFET IC N-Channel 1500V 8A TO247-3

China STW9N150 Single FETs MOSFET IC N-Channel 1500V 8A TO247-3 on sale
STW9N150 MOSFET N-CH 1500V 8A TO247-3 Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr STMicroelectronics Series PowerMESH™ Package Tube Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ......
J&T ELECTRONICS LTD

Address: ROOM32 11/F LEE KA INDUSTRIAL BUILDING,8 NG FONG STREET SAN PO KONG, KL, HONGKONG.

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

China IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET on sale
...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ......
Angel Technology Electronics Co

Address: FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000

High Performance Mosfet Power Transistor With Extreme High Cell Density

China High Performance Mosfet Power Transistor With Extreme High Cell Density on sale
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

High Performance Mosfet Power Transistor With Extreme High Cell Density

China High Performance Mosfet Power Transistor With Extreme High Cell Density on sale
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)...
Beijing Silk Road Enterprise Management Services Co.,LTD
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