IRFHM830TRPBF MOSFET Power Electronics High-Performance Power MOSFET Transistor
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Product Description: 1. N-Channel MOSFET for high frequency switching applications 2. Low gate charge and fast switching speed 3. Low on-resistance and high current handling capability 4. High Avalanche Energy and ESD protection 5. RoHS Compliant and Pb-......
Shenzhen Sai Collie Technology Co., Ltd.
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Surface Mount NTBG040N120SC1 N-Channel 60A Single FETs MOSFETs Transistors
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... Vgs(th) (Max) @ Id 4.3V @ 10mA Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V Features Of Transistors Typ. RDS(on)= 40 m...
ShenZhen Mingjiada Electronics Co.,Ltd.
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High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16
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High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF......
Anterwell Technology Ltd.
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ISO9001 Metal Oxide Semiconductor Fet Mosfet Transistor Multi Function
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Low On Resistance High Power MOSFET Stable Process Reliable Quality *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {......
Reasunos Semiconductor Technology Co., Ltd.
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MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors
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MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,......
ChongMing Group (HK) Int'l Co., Ltd
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Cool MOS Audio High Power Amplifier MOSFET Transistor IC DTP11N70SJ
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Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original...
Hans Innovation Group
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.
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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK
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... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ......
Shenzhen Koben Electronics Co., Ltd.
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ......
Angel Technology Electronics Co
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