FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications
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FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ ......
Shenzhen Sai Collie Technology Co., Ltd.
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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors
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... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •...
Anterwell Technology Ltd.
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J201 JFET N-Channel Transistor General Purpose high power rf transistors
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...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power......
Wisdtech Technology Co.,Limited
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1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB
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...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Charging Pile High Power IGBT Transistor Multipurpose For OBC
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...High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power......
Reasunos Semiconductor Technology Co., Ltd.
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High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts
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FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#......
Shenzhen Res Electronics Limited
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Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
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VBE Technology Shenzhen Co., Ltd.
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MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
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... SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are...
ChongMing Group (HK) Int'l Co., Ltd
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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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