Practical High Power N Channel Mosfet Metal High Current For Converter
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Low On Resistance MOSFET - High Power Device for *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: block;max-width......
Reasunos Semiconductor Technology Co., Ltd.
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IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications
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IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (......
Shenzhen Sai Collie Technology Co., Ltd.
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Industrial High Power N Channel MOSFET TO-252 High Efficiency And Performance
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Industrial Practical High Power MOSFET High Efficiency And Performance Applications: This product is manufactured in China by LX, a trusted name in the electronics industry. It is ISO9001, ISO14001, ROHS, and REACH certified, ensuring that it meets the ......
Guangdong Lingxun Microelectronics Co., Ltd
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IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3
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IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (......
Shenzhen Zhaocun Electronics Co., Ltd.
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CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet
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...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE High power......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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450mA 850mA 3.3V Logic Compatible Bldc High Side N Channel Mosfet Switch Driver
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...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The...
Changzhou Bextreme Shell Motor Technology Co.,Ltd
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NTMFS4C024NT1G Integrated Circuit Chip 2.8mOhm Low Power N Channel Mosfet
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Integrated Circuit Chip NTMFS4C024NT1G N-Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
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Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working......
Shenzhen Hongxinwei Technology Co., Ltd
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AV-555BT Professional 5.1 Channel Dynamic Spectrum Amplifier 600W High-Power Home Subwoofer with Metal Construction
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Product Description Specification item value Channel 5.1 place of origin China Guangdong Type Home Amplifier private mold Yes Brand OEM Material Metal model AV-555BT Company Profile Why Choose Us Certificates & Production Processes Packing & Delivery 1. ......
Shenzhen Creatall Electronics Co., Ltd.
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1000M/100M Base-T Gigabit Ethernet Slip Ring High Power 2 Channels
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1000M/100M Base-T Ethernet Slip Ring 2 Channels Gigabit Ethernet Description of EH3899-02 Ethernet Slip Ring Available for custom, run 100/1000M Ethernet signal Insertion loss, return loss and crosstalk are three very important parameters for an Ethernet ......
Shenzhen Senring Electronics Co., Ltd.
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