Cool MOS Audio High Power Amplifier MOSFET Transistor IC DTP11N70SJ
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Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original...
Hans Innovation Group
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR P Channel Mosfet
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... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT ......
Wisdtech Technology Co.,Limited
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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors
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... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C...
Beijing Silk Road Enterprise Management Services Co.,LTD
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100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5
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MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ......
Shenzhen Koben Electronics Co., Ltd.
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NTK3134NT5G MOSFET Power Electronics SOT-723 High Power N-Channel Transistor Applications
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...MOSFET Power Electronics SOT-723 High Power N-Channel Transistor Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 350mOhm @ 890mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 16 V FET Feature - Power......
Shenzhen Sai Collie Technology Co., Ltd.
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PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors
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... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ......
Mega Source Elec.Limited
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S525T-GS08 VISHAY IC Surface Mount SOT-223 S525T RF MOSFET Transistors
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VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: ......
ShenZhen QingFengYuan Technology Co.,Ltd.
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One Generation High Power RF Connectors SMA To IPEX RF Wire Connection
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...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ......
Dalee Electronic Co., Ltd.
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N-Channel NVH4L160N120SC1 SiC Power Single MOSFET Transistors TO-247-4 1200V
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N-Channel NVH4L160N120SC1 SiC Power Single MOSFET Transistors TO-247-4 1200V Product Description Of NVH4L160N120SC1 NVH4L160N120SC1 is 1200V, 224mOhm, 17.3A SiC Power Single N-Channel MOSFET Transistors, package is TO247-4L. Specification Of ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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100W High Power RF Load IP65 Water Protection PIM 15DBC In 2G , 3G , 4G
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...high power RF Load waterproof IP67 with PIM 150dBc 4.3-10 female connector used in 2G,3G,4G 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Frequency :0-3000G New features 1. Integrates 2 ~8 Wireless Bands 2. More than 50~100 dB Input Isolation 3. High Average Power......
Lenolink Telecommunication Co.,Ltd
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