FF450R12KT4 IGBT power transistor module 450A 1200V High Voltage Igbt Power Supply Module IGBT Modules N-CH 1.2KV 580A
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... requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Features 1:High Power Handling: The...
Shenzhen Retechip Electronics Co., Ltd
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Fast Switching Speed High Voltage IGBT 650V-1200V In TO-247 Package
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... to 60KHz. This faster switching speed allows for more efficient motor control and reduces the risk of damage to the device. Our High Power IGBT is versatile and can be used in a variety of applications including home appliances such as fans, pumps, and...
Guangdong Lingxun Microelectronics Co., Ltd
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CM900HG-130X Automotive IGBT Modules 6500V High Voltage IGBT Modules 900A HVIGBT Module
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..., and improved efficiency. It is ideal for use in power electronics equipment, such as traction and large industrial machines. Specification Of CM900HG-130X Rated Voltage (Vces)/...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Fiber optic, single and high power high voltage IGBT driver,Drive 3300 v, 1500a HM - IGBT
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...high reliability and high power high voltage IGBT drive;Drive 3300 v, 1500a HM - IGBT module, plug and play.With IGBT switch state hint of models are available to support the multilevel applications. Application ● Traction ● SVG ● Active power filter ● Medium-voltage converter ● Mine inverter ● Medium-voltage......
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
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IXYS IXGH24 High Voltage IGBT Discrete Semiconductors IXGH24N170
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...High Voltage IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT Type NPT Voltage......
Angel Technology Electronics Co
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NPN PNP Transistors IXSN35N120U1 - TOSHIBA - High Voltage IGBT with Diode
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... Detail: High Voltage IGBT with Diode Description: VCES = 1200 V IC25 = 70 A VCE(sat) = 4 V Applications: ● International standard package mini BLOC (ISOTOP) compatible ● Aluminium-nitride isolation - high power dissipation ● Isolation voltage 3000......
Mega Source Elec.Limited
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
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...IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power Dissipation: 1500W Junction Temperature: 150C Isolation Voltage......
Guangzhou Sande Electric Co.,Ltd.
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FF450R12ME4 IGBT Modules IGBT 1200V 450A
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... VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 675 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 2.......
Wisdtech Technology Co.,Limited
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Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
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... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:...
Reasunos Semiconductor Technology Co., Ltd.
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IRG7PH30K10DPBF IGBT 1200V 30A 180W TO247AC Single IGBT Module
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IRG7PH30K10DPBF IGBT Power Module Transistors IGBTs Single IRG7PH30K10DPBF Specifications Part Status Obsolete IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 27A Vce......
KZ TECHNOLOGY (HONGKONG) LIMITED
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