J201 JFET N-Channel Transistor General Purpose high power rf transistors
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...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage......
Wisdtech Technology Co.,Limited
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White Ceramic High Voltage RF Relay Switch For Antenna Coupler Application
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...High Voltage RF Relay Switch For Antenna Coupler Application A high voltage RF relay switch is an electronic device specifically designed to control the flow of high voltage signals in RF (Radio Frequency) applications. It is commonly used in various industries, including telecommunications, broadcasting, aerospace, and scientific research. High voltage RF relay switches are designed to handle high voltage......
Jingdezhen WPVAC Electric Co.,Ltd
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Stable Inverter High Voltage MOSFET Transistor Multi Function
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...High Voltage MOSFET is an Ultra-hv MOSFET, a kind of High Voltage Mosfet Transistor, that offers outstanding performance in terms of heat dissipation and low on-resistance. It is equipped with advanced features such as new Lateral Variable Doping Technology, Special Power MOS Structure and excellent characteristics in high-temperature, allowing for superior performance over the conventional High Voltage MOSFET. The High...
Reasunos Semiconductor Technology Co., Ltd.
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AD9361BBCZ High Power Rf Transistor
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...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High...
Shenzhen Sai Collie Technology Co., Ltd.
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6 - 11 GHz High Power Amplifier Psat 49.5 dBm High Voltage RF Power Amplifier for microwave links
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...High Power Amplifier Psat 49.5 dBm High Voltage RF Power Amplifier for microwave links Description This high-voltage RF power amplifier operates in the frequency range of 6 to 11 GHz and features a Psat (saturated output power) of 49.5 dBm. It is designed to deliver high......
Nanjing Shinewave Technology Co., Ltd.
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OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor
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... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Multipurpose Low ON Resistance High Voltage Mosfet Transistor For Adaptor
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Multipurpose Low ON Resistance Voltage MOSFET Transistors For Adaptor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-......
Guangdong Lingxun Microelectronics Co., Ltd
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150–4000pF High Voltage Rf Capacitors 10-15kV High Q Capacitors Feed Through Mounting
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RF Power Capacitors Class1 10-15kV Feed-Through Mounting Features Low loss Class 1 ceramic dielectric materials with noble metal electrodes resulting in low self heating High Voltage / High Reactive Power Ratings Low Inductance construction permitting higher frequency use Low magnetic susceptibility Application • HF Filter, By-Pass & Coupling Circuits • High Power Matching Tuned Circuits • Antenna Circuits • Industrial Applications • High......
XIAN XIWUER ELECTRONIC AND INFO. CO., LTD
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FDA50N50 High Voltage Mosfet Transistor 48A 500V DMOS AC−DC Power Supply Transistor
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FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and......
Shenzhen Retechip Electronics Co., Ltd
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MJD340TF High Voltage Power Transistors D-PAK switching power mosfet
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... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V...
ChongMing Group (HK) Int'l Co., Ltd
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