InAs Wafer Crystal Substrates N Type For MBE 99.9999% Monocrystalline
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... 4inch InAs Wafer Crystal Substrates N-Type For MBE 99.9999% Monocrystalline Introduce of InAs substrate Indium InAs or indium mono-arsenide is a semiconductor composed of indium and arsenic. It has the appearance of a gray cubic crystal with a melting......
SHANGHAI FAMOUS TRADE CO.,LTD
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2 Inch C Plane Polished Sapphire Wafers Crystal Substrates
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2 Inch Sapphire Crystal C Plane Polished Sapphire Wafers Sapphire Substrates Specification: Single crystal Al2O3 99.999％ Orientation: R-axis 0.5° Diameter:50.8±0.1mm Thickness :430±15um or 330±15um Primary flat:......
Hangzhou Freqcontrol Electronic Technology Ltd.
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N-Type / Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers
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..., and the production wavelength is 2~14 μ M infrared light emitting device. InAs single crystal substrate can also be used for epitaxial growth of AlGaSb superlattice structural materials, and the production of mid-infrared quantum cascade lasers. These...
SHANGHAI FAMOUS TRADE CO.,LTD
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Undoped InAs Substrate , 2”, Prime Grade , Epi Ready -InAs Wafer Manufacturer
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... wafer diameters range from 25.4 mm (1 inch) to 100 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime ......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
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...Wafer Optical Substrate High Pressure Experimental Phase LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications. LaAlO3 single crystal......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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2 inch InAs Wafer Indium Arsenide one / two sides polished
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... and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Gadolinium Gallium Garnet GGG Wafers And Substrates
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...crystal is material with good optical, mechanical and thermal properties which make it promising for use in fabrication of various optical components as well as substrate material for magneto - optical films and high - temperature superconductors. It can be used for infrared optical isolator (1.3 and 1.5 um), which is made of YIG or BIG film on the Gadolinium Gallium Garnet (GGG) substrate......
JOPTEC LASER CO., LTD
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Multifunctional 2 Inch Glass Carrier Wafer , Sapphire Substrate Single Side Flat
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2 Inch Single Side Polished Sapphire Wafer Sapphire Substrate With Flat Sapphire (Sapphire, also known as white sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal ......
ARH Sapphire Co., Ltd
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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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.... SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd
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Semiconductor Advanced Technical Ceramics Wafer Chucking Substrate For Picking Up Wafer
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... are used to manipulate and carry silicon wafers through the whole production process. The chemical inertness of ceramics allows those components to be contamination-free for the wafer in particular in chemical wet etching baths. These items enable the...
Dongguan Ming Rui Ceramic Technology Co.,ltd
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