K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
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Quick Detail: 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Description: The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. ......
Mega Source Elec.Limited
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AOS Integrated Circuits Industrial ics AO9926 Integrated Circuits AO99 IC BOM K4m561633g-bn75
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ShenZhen QingFengYuan Technology Co.,Ltd.
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