Sapphire Al2O3 Ingots 80KG 200KG 400KG KY Growth Method For Sapphire Component Processing
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Sapphire Al2O3 ingots 80KG 200KG 400KG KY growth method for sapphire component processing Product abstract Our Sapphire Al2O3 ingots, offered in weights of 80KG, 200KG, and 400KG, represent the pinnacle of sapphire component processing. Utilizing the innovative KY growth method, these ingots are meticulously crafted to meet the exacting standards of various industries requiring high-quality sapphire components. Each ingot......
SHANGHAI FAMOUS TRADE CO.,LTD
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Grown Sapphire Crystal Boule Sapphire Ingot KY Kyropoulos method 80kg-300kg
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...sapphire crystal boule Grown Sapphire Crystal Boule Sapphire Ingot KY Kyropoulos method 80kg-300kg Sapphire Crystal Boule (Sapphire crystal material) is a synthetic single crystal alumina (α-Al₂O₃), It is usually grown by Czochralski (CZ) or Heat exchange Method......
SHANGHAI FAMOUS TRADE CO.,LTD
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Al2O3 CZ Synthetic Sapphire Boule , Synthetic Pink Sapphire For Watch Glass
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Synthetic Sapphire Boule For Watch Glass and case in Pink Color Introduction of Synthetic Sapphire Boule Sapphire has a melting point of 2040°C, and its high melting point makes it inevitable that volatiles such as thermal systems and crucibles exist in ......
ARH Sapphire Co., Ltd
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Gallium Nitride On Sapphire Semiconductor GaN 100mm
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...Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - Used to grow sapphire crystal in volume. Kyropoulos (KY) - grows high quality sapphire but requires an enormous amount of electricity. Edge defined, Film-fed (EFG) - FG technique. A crystal growth......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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