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ldmos power transistor

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BLF178XR 28dB Mosfet Power Transistor 50V 40mA 108MHz Frequency

China BLF178XR 28dB Mosfet Power Transistor 50V 40mA 108MHz Frequency on sale
...LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %: Output power = 1400 W Power......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

BLS6G2731-120 LDMOS S-band radar power transistor RF Power Transistors

China BLS6G2731-120 LDMOS S-band radar power transistor  RF Power Transistors on sale
BLS6G2731-120 is a LDMOS S-band radar power transistor. Part NO: BLS6G2731-120 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

China Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors on sale
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VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS

China PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS on sale
...power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS......
Angel Technology Electronics Co

Address: 1607B Coastal Buidling East Block Nanshan District Shenzhen China 518000

AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions

China AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions on sale
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package

China Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package on sale
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

30P06D TO-252 High Power Transistor , Custom Field Effect Transistor

China 30P06D TO-252 High Power Transistor , Custom Field Effect Transistor on sale
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W

China UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W on sale
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

China Low Gate Charge Mosfet Power Transistor For Inverter Systems Management on sale
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power...
Beijing Silk Road Enterprise Management Services Co.,LTD

IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor

China IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor on sale
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

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