7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss
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7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS7N60A2 TO-220F N 7 600 ±30 2 4 980 1300 ......
Guangdong Lingxun Microelectronics Co., Ltd
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EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type
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...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage of coil to contacts : 1500 Vac, 2500 V (rise time : 2 µs, fall time : 10 µs) Low......
Anterwell Technology Ltd.
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EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type
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...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage of coil to contacts : 1500 Vac, 2500 V (rise time : 2 µs, fall time : 10 µs) Low......
ChongMing Group (HK) Int'l Co., Ltd
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FDN342P MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions
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...MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss......
Shenzhen Sai Collie Technology Co., Ltd.
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Multipurpose High Voltage MOSFET Heat Dissipation For LED Driver
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...High Voltage MOSFET – an embedded FRD HV MOSFET with a low on-resistance and high voltage/ultra-high voltage rating. Designed with MOSFET technology, this ultra-high voltage MOSFET is perfect for applications that require high voltage or ultra-high voltage power. Its low on-resistance provides high efficiency and low power loss. This type N MOSFET is the perfect choice for any high voltage or ultra-high...
Reasunos Semiconductor Technology Co., Ltd.
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High Speed Power MOSFET IGBT Driver 3 Phase High Voltage Gate Driver
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High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage...
Shanghai Juyi Electronic Technology Development Co., Ltd
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Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V
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...MOSFET P-Chan Drain-Source Breakdown Voltage 250 V Descriptions of Aviation Parts: Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs......
XIXIAN FORWARD TECHNOLOGY LTD
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2N4416 Transistor IC Chip Through Hole JFET N Channel 30V Low Ciss
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... are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage. The...
Walton Electronics Co., Ltd.
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss......
Beijing Silk Road Enterprise Management Services Co.,LTD
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