12V Si MOSFET Diode Transistor Chips IRLML6401TRPBF
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...: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A ......
Hong Kong Jia Li Xin Technology Limited
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12V Si MOSFET IC Diode Transistor IRLML6401TRPBF P-Ch -4.3A 50m Ohm
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12V Si MOSFET Diode Transistor Chips IRLML6401TRPBF P-Ch -4.3A 50m Ohm Product description Part number IRLML6401TRPBF is manufactured by Infineon Incorporated Company and distributed by AYE. As one of the leading distributors of electronic products, we ......
AYE TECHNOLOGY CO., LIMITED
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60V 10.8A Diodes Transistors FETS DMT6009LSS-13 Single MOSFET N Channel
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...MOSFET N Channel 60V 10.8A Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET......
Angel Technology Electronics Co
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Electronic Components Mosfet Power Transistor Diode New Ic Chip STTH6003CW TO-247
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Electronic components STTH6003CW TO-247 mosfet diode new ic chip Model number STTH6003CW Package TO- 247 D/ C 19+ 18+ 17+ Type Diode/ IC chip Condition In stock Email sales07@wtxcapacitors.com More product: Payment and shipping: A. By Express-such as DHL, ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
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...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
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...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet......
Beijing Silk Road Enterprise Management Services Co.,LTD
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ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK
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ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A......
Shenzhen Zhaocun Electronics Co., Ltd.
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Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G
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Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirements and Halogen Free 3.S- prefix for ......
Shenzhen Res Electronics Limited
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BLF188XR RF Mosfet Power Transistor 108MHz 24.4dB 1400W SOT539A
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...Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 24.4dB 1400W SOT539A Features eXtremely rugged high-power delivery up to 1400 W Excellent stability under severe mismatch conditions Compact and easy-to-manufacture due to all-planar matching structure Improved Class-C operation due to new dual-sided ESD diode......
Shenzhen Koben Electronics Co., Ltd.
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