6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A
|
...MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS(ON) < 16mΩ@ VGS=10V P-Channel VDS = -30V,ID......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
NTMFS5C404NLT1G MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs
|
...MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 52A (Ta), 370A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V Vgs(th) (Max) @ Id......
Shenzhen Sai Collie Technology Co., Ltd.
|
JY13M BLDC Motor Driver MOSFET N And P Channel 40V Surface Mount
|
.... The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=...
Shanghai Juyi Electronic Technology Development Co., Ltd
|
2N7002LT1G power mosfet ic Power Mosfet Transistor Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
|
...MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 @ 10 V, 500 mA 115 mA MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2) ID ID......
Anterwell Technology Ltd.
|
7A 650V Large EMI Margin N Channel MOSFET LC65R600F
|
...ID TYP MAX Typ Typ LC65R600F TO-220F 1 N 7 650 30 2 4 550 640 Product Description: One of the key features of this MOSFET is its 100% avalanche tested design, which ensures that it can handle high voltage spikes and other harsh conditions without failure....
Guangdong Lingxun Microelectronics Co., Ltd
|
High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK
|
... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)...
Shenzhen Koben Electronics Co., Ltd.
|
Power Mosfet Transistor IC NP110N055PUG 55V 110A 1 N-Channel Switch MOS FIELD EFFECT SOT-263 Electronic Component
|
... Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4 mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (......
Shenzhen Quanyuantong Electronics Co., Ltd.
|
High Frequency Mosfet Power Transistor For Telecom / Industrial Use IRLR7843TRPBF
|
... Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f IDM Pulsed Drain Current c 620 PD @TC = ......
Shenzhen ATFU Electronics Technology ltd
|
FDC608PZ MOSFET -20V P-Channel 2.5V PowerTrench MOSFET N And P Mosfet
|
...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V ......
Wisdtech Technology Co.,Limited
|
20mW Automotive IGBT Modules DF23MR12W1M1B11BPSA1 Silicon Carbide MOSFET Modules
|
..., Chassis Mount. Specification Of DF23MR12W1M1B11BPSA1 Part Number DF23MR12W1M1B11BPSA1 Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 25A (Tj) Rds On (Max) @ Id, Vgs 45mOhm @ 25A, 15V (Typ) Vgs(th) (Max) @ Id 5...
ShenZhen Mingjiada Electronics Co.,Ltd.
|
Submit your “mosfet id” inquiry in a minute :