BLF6G27LS-100,118
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RF Mosfet 28 V 900 mA 2.5GHz ~ 2.7GHz 17dB 14W LDMOST...
KANG DA ELECTRONICS CO.
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BLF6G27LS-100,118
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RF Mosfet 28 V 900 mA 2.5GHz ~ 2.7GHz 17dB 14W LDMOST...
Beijing Silk Road Enterprise Management Services Co.,LTD
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BLF6G27LS-75,118
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..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G27LS-75,118 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more...
Rozee Electronics Co., Ltd
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BLF6G27LS-100,112 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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BLF6G27LS-100,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency - Gain - Voltage - Test 28V Current Rating 29A Noise Figure - Current - Test 900mA Power - Output 14W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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Original 100% High Power Mosfet Transistors BAT41KFILM Chips Electronic Components
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Diode original in stock BAT41KFILM chips electronic components Model number/ Part number BAT41KFILM Package SOD523 D/ C A new year Type Diode Brand name ST Place of original China Condition Original 100% WhatsApp/ Wechat 86- 15102073750 Feature High ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
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... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1...
Shenzhen Res Electronics Limited
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2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( PIE-MOSV )
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2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward transfer admittance: |Yfs| = 0.4 S (typ.) ►Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) ►......
Anterwell Technology Ltd.
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