TC4420CPA high power mosfet transistors Power Mosfet Transistor 6A HIGH-SPEED MOSFET DRIVERS
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...HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV ■ Matched Rise and Fall Times ...................... 25nsec ■ High Peak Output Current ......................... 6A Peak ■ Wide Operating Range .......................... 4.5V to 18V ■ High...
Anterwell Technology Ltd.
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TC4420CPA high power mosfet transistors Power Mosfet Transistor 6A HIGH-SPEED MOSFET DRIVERS
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...HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV ■ Matched Rise and Fall Times ...................... 25nsec ■ High Peak Output Current ......................... 6A Peak ■ Wide Operating Range .......................... 4.5V to 18V ■ High...
ChongMing Group (HK) Int'l Co., Ltd
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Mosfet Transistor FDMC86139P High Speed Low Voltage High Efficiency Switch
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FDMC86139P, N-Channel Power MOSFET The FDMC86139P is an N-Channel Power MOSFET designed for high frequency switching applications. It is designed to provide excellent switching performance and high current handling capability. Features: - Low on-resistance......
Shenzhen Sai Collie Technology Co., Ltd.
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ISO Durable High Voltage Mosfet Transistor , Multipurpose High Speed Switching Mosfet
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Product Description: High Power MOSFET is a type of high efficiency MOSFET for high voltage applications. It is designed for high frequency operations and is used in a range of applications, such as solar inverter, high-voltage DC/DC converter, motor ......
Reasunos Semiconductor Technology Co., Ltd.
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IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor
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Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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JUYI JY213H BLDC Motor Driver MOSFET / IGBT Driver High Speed 3 - Phase Half - Bridge
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JY213H High Voltage 3-Phase Gate Driver with three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase ......
Shanghai Juyi Electronic Technology Development Co., Ltd
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JY213H SOP20 BLDC Motor Driver MOSFET / IGBT Driver High Speed High Voltage 3-Phase Gate Driver
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...high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high......
Changzhou Junqi International Trade Co.,Ltd
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A92 PNP Transistor Switch High Speed Switching Surface Mount +
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TO-92 Plastic-Encapsulate Transistors A92 TRANSISTOR (PNP) FEATURE High voltage MARKING A92=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMATION Part Number Package Packing Method Pack ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRFP4568PBF 150V N Channel MOSFET Transistors For Solar Power Inverter
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... Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Description 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package The StrongIRFET™ power MOSFET family is...
Shenzhen Retechip Electronics Co., Ltd
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Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF
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...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd
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