IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications
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...MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET is suitable for high power applications such as power...
Shenzhen Sai Collie Technology Co., Ltd.
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High Power MOSFET NTMFD0D9N02P1E Power Mosfet 30/25V POWERTRENCH® Power Clip
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... sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a...
Sunbeam Electronics (Hong Kong) Limited
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STK681-310 Onsemi Motor Driver Power MOSFET IGBT IC Electronic components
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...Power MOSFET IGBT IC Electronic components - Motor Driver Power MOSFET, IGBT Parallel -IC Specification : Category Integrated Circuits (ICs) PMIC - Motor Drivers, Controllers Mfr onsemi Part number STK681-310 Package Tube Part Status Obsolete Motor Type - Stepper - Motor Type - AC, DC Brushed DC Function Driver - Fully Integrated, Control and Power......
Angel Technology Electronics Co
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HEXFET Power Mosfet Transistor , power mosfet module IRF7329TRPBF
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... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well...
ChongMing Group (HK) Int'l Co., Ltd
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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...Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Anterwell Technology Ltd.
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High Power MOSFET High Power N Standard Based On National Military Standard Production Line High Power
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... military standard production line, ensuring a stable process and reliable quality. With its low on-resistance, the High Power HV MOSFET minimizes power loss and heat generation, making it an excellent choice for applications where high efficiency is...
Reasunos Semiconductor Technology Co., Ltd.
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Automotive IGBT Modules F3L11MR12W2M1HPB19 MOSFET Low Power IGBT Transistors Module
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...MOSFET Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IRF7342TRPBF N-Channel MOSFET, 40V Vds, 9.1A Id, Low Rds(on), SOIC-8 SMT, RoHS Compliant, Fast Switching for Power Electronics
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... MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power ......
Berton Electronics Limited
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Trans MOSFET 60V 70A Electronic Integrated Circuits IRFP064PBF
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...MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC Descriptions : Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power......
Shenzhen Weitaixu Capacitor Co.,Ltd
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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
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...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P-Channel VDS = -30V,ID = -9A RDS(ON) < 37mΩ@ VGS=-10V High power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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