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mosfets with rf power capability

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MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF

China MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF on sale
MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS

China MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS on sale
The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

China MLP1N06CLG  Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe on sale
Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting

China MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting on sale
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET on sale
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio

China 150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio on sale
...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

IRFU9120NPBF High Power MOSFET for Advanced Power Electronics Applications

China IRFU9120NPBF High Power MOSFET for Advanced Power Electronics Applications on sale
... of only 7.6nC and an on-resistance of only 35mΩ. The MOSFET is capable of operation at high current levels, up to 10A, making it well-suited for a variety of applications. Features: - Low-voltage operation - Low on-resistance - ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

5.1-5.2GHz RF Power Amplifier Module Built In VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness

China 5.1-5.2GHz RF Power Amplifier Module Built In VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness on sale
... RF Power Amplifier Module with built-in VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness Product Description: RF Power Amplifier Module Our RF Power Amplifier Module is designed to provide efficient, high-power RF jamming capabilities......
VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

Anritsu ML2437A RF Power Meter With Graphics Display Ruggedized Housing

China Anritsu ML2437A RF Power Meter With Graphics Display Ruggedized Housing on sale
... instrument that samples at more than 35K per second and achieves 90 dB dynamic range with a single sensor. These meters include graphics display capability as a standard feature. The ruggedized housing and...
Shenzhen Meigaolan Electronic Instrument Co. Ltd

Address: RA1-B2,F32 of Dongjianghaoyuan, Baomin Rd, Bao'an District, Shenzhen,China

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

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