PTFA260451E V1
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..., please refer to the data sheet, such as PDF files Docx documents, etc. We have PTFA260451E V1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd
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PTRA093302DC V1 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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...V1 Specifications Part Status Last Time Buy Transistor Type - Frequency - Gain - Voltage - Test - Current Rating - Noise Figure - Current - Test - Power - Output - Voltage - Rated - Package / Case - Supplier Device Package - Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. PTRA093302DC V1......
KZ TECHNOLOGY (HONGKONG) LIMITED
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PTFB193404F V1
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The PTFB193404F V1,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact......
Beijing Silk Road Enterprise Management Services Co.,LTD
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PTFA092201E V1
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RF Mosfet 30 V 1.85 A 960MHz 18.5dB 220W H-36260-2...
KANG DA ELECTRONICS CO.
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Low On Resistance High Power MOSFET for High Frequency and in Challenging Environments
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...efficiency. As a type N MOSFET, it is specifically tailored for applications where high power and high efficiency are crucial factors. One of the standout features of this high power MOSFET is its ability to operate at high frequencies, making it ideal for...
Reasunos Semiconductor Technology Co., Ltd.
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PTVA101K02EV-V1-R0
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RF Mosfet 50 V 150 mA 1.03GHz ~ 1.09GHz 21dB 900W H-36275-4...
Shenzhen Wonder-Chip Electronics Company Limited
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ABB UNS0881A-P,V1 3BHB006338R0001 Gate Drive Interface Board
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.... The ABB UNS0881a-P,V1 3BHB006338R0001 is a Gate Driver Interface (GDI) PCB. This component is designed to control and supply power to gate drivers, which in turn control power semiconductors such as IGBTs and MOSFETs in power electronic applications. It...
Joyoung International Trading Co.,Ltd
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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK
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... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ......
Shenzhen Koben Electronics Co., Ltd.
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Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Buy AUO 7.0 inch G070VW01 V1 350 cd/m² (Typ.) 800(RGB)×480 , WVGA PANEL 60Hz
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...V1 350 cd/m² (Typ.) 800(RGB)×480 , WVGA PANEL 60Hz Model Number:G070VW01 V1 Specification for AUO G070VW01 V1 1,AUO G070VW01 V1 Basic Information Panel Brand : Panel Model : G070VW01 V1 Model Alias : G070VW01 V.1 Panel Type : a-Si TFT-LCD , Panel Application : Operating Temperature : -20 ~ 70 °C Storage Temperature : -20 ~ 70 °C RoHS : 2,AUO G070VW01 V1......
Mega Source Elec.Limited
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