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MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage

China MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage on sale
MR0A08BCYS35 Magnetoresistive Random Access Memory (MRAM) EHHD024A0A41Z DE118-RS-20/6.35 Memory Data Storage FEATURES BENEFITS • One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design • Improves reliability by ......
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

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