IKW40N65H5 Insulated Gate Bipolar Transistor IGBT Transistors 650V 74A 250W
|
...Gate Bipolar Transistor Applications •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate......
Shenzhen Retechip Electronics Co., Ltd
|
Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
|
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd
|
MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high ......
ChongMing Group (HK) Int'l Co., Ltd
|
Durable Insulated Gate Bipolar Transistor Multipurpose IRG4PH50UD
|
... IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
|
Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
|
...Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional......
Guangzhou Topfast Technology Co., Ltd.
|
GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
|
...) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR
|
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • ......
Anterwell Technology Ltd.
|
ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE
|
... GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *Enterprise management information system *Intelligent multi-......
Wuhan Sean Automation Equipment Co.,Ltd
|
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems
|
... Gate Bipolar Transistor The APT40GR120B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge......
Hefei Purple Horn E-Commerce Co., Ltd.
|
SEMIKRON SKKT460/22E H4 2300V IGBT Module High-Performance Insulated Gate Bipolar Transistor
|
...IGBT Module The SEMIKRON SKKT460/22E H4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module that combines MOSFET high input impedance with bipolar transistor low conduction loss for precise, efficient power control in demanding industrial......
OUTER ELECTRONIC TECHNOLOGY (HK) LIMITED
|