Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components
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Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components Original Transistor 2SK1305 Silicon N Channel MOS FET TO-3P Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven fro......
Anterwell Technology Ltd.
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Silicon N Channel MOS FET 2SK2939-90STL RENESAS TO-263 New and Original
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Silicon N Channel MOS FET 2SK2939-90STL RENESAS TO-263 New and Original Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Part No 2SK2939-90STL Manufacturer RENESAS Package TO-263 ......
Mega Source Elec.Limited
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D2PAK-7 Surface Mount NVBG080N120SC1 N-Channel Single FETs Transistors
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D2PAK-7 Surface Mount NVBG080N120SC1 N-Channel Single FETs Transistors Product Description Of NVBG080N120SC1 NVBG080N120SC1 include high efficiency, fast operation frequency, increased power density, reduced EMI, and ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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D478 IC AOD478 N-Channel MOSFET 100V 2.5A TO-252 SOT252 MOS FET Transistor Original
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Product Detail Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds......
Shenzhen Quanyuantong Electronics Co., Ltd.
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BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors
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Thyristors BT151 series GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor ......
ChongMing Group (HK) Int'l Co., Ltd
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New original IRF3808PBF IRF3808 TO-220 N channel MOS FET
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G-Resource Electronics Co.,Ltd
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NTJD5121NT1G SOT363 Low Signal Relays N Channel 60V 0.295A MOS FET
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... Style: SMD/SMT Package / Case: SC-88-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 295 mA Rds On - Drain-Source ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
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...Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
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...Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor......
Beijing Silk Road Enterprise Management Services Co.,LTD
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Heatproof High Voltage SiC Mosfet , Multipurpose N Channel Fet Transistor
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Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range......
Reasunos Semiconductor Technology Co., Ltd.
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