SI1902CDL-T1-GE3 MOSFET 20V Vds 12V Vgs SC70-6
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MOSFET 20V Vds 12V Vgs SC70-6 Product Attribute Attribute Value Select Attribute Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-363-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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SI2302CDS-T1-GE3 Chips Integrated Circuits IC MOSFET 20V Vds 8V Vgs SOT-23
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SI2302CDS-T1-GE3 Chips Integrated Circuits IC MOSFET 20V Vds 8V Vgs SOT-23 PRODUCT DESCRIPTION Part number # SI2302CDS-T1-GE3 is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we ......
Hong Kong Jia Li Xin Technology Limited
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FDMA1023PZ Dual P Channel MOSFET -20V -3.7A 72mΩ
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High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET -20V , -3.7A, 72mΩ High Power MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET -20V , -3.7A, 72mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-......
Sunbeam Electronics (Hong Kong) Limited
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FDC608PZ MOSFET -20V P-Channel 2.5V PowerTrench MOSFET N And P Mosfet
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...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms ......
Wisdtech Technology Co.,Limited
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DMN26D0UFB4-7 Diodes Mosfet Enhance Mode Mosfet 20V N-Chan X2-DFN1006
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...MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of channels: 1 Channel Vds......
Eastern Stor International Ltd.
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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection
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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection Features •HBM Class 0A, MM Class M1B (Note 4) •BVSS Prefix for ......
TOP Electronic Industry Co., Ltd.
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IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications
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...MOSFET Power Electronics High Power N Channel MOSFET Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds......
Shenzhen Sai Collie Technology Co., Ltd.
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......
Beijing Silk Road Enterprise Management Services Co.,LTD
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SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8
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...Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 FEATURES TrenchFET® power MOSFETs Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) -60 0.0145 at VGS = -10 V -14.4 0.0190 at VGS = -4.5 V -12.6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-Source Voltage VDS......
ChongMing Group (HK) Int'l Co., Ltd
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