XRF286S Solid State 1296 MHz Amplifier Ic Chips Power Mosfet N Channel Rf Amplifier Transistor
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XRF286S N/A Electronic Components IC MCU Microcontroller Integrated Circuits XRF286S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:......
Shenzhen Kaigeng Technology Co., Ltd.
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Integrated Circuit Chip ADL5205ACPZ 35 dB Range 2 Channel RF Amplifier IC
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Integrated Circuit Chip ADL5205ACPZ 35 dB Range 2 Channel RF Amplifier IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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MW6S004 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET FSL RF Power Transistors SMD
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... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers,...
Mega Source Elec.Limited
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HMC789ST89ETR RF Power Transistors General Purpose Frequency 700MHz
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...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor......
Shenzhen Sai Collie Technology Co., Ltd.
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MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel
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...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain Gate Voltage: ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB
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...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor Polarity: N-Channel......
Walton Electronics Co., Ltd.
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
VBE Technology Shenzhen Co., Ltd.
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High-Performance 2 Channel Power Amplifier For Audio System Integration CD8000
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...Channel Power Amplifier for Audio System Integration CD8000 Operational Principles Amplification Process: The amplifier takes a low-level audio signal (like from a mixer) and uses transistors or tubes in the amplification stage to increase the signal's power. This process involves manipulating the input signal to produce a stronger output without altering the original sound characteristics. Feedback Mechanism: Many amplifiers...
Foshan Subole Electronic Technology Co., Ltd.
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR P Channel Mosfet
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ......
Wisdtech Technology Co.,Limited
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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