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N Channel Transistor 180a 200w

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n channel transistor 180a 200w

from 12 Products

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

China IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET on sale
... Hole TO-220AB Specification: Category Discrete Semiconductor Products   Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.

Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

China IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET on sale
...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On,...
Angel Technology Electronics Co

Address: FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000

Integrated Circuit Chip IPB180P04P403ATMA2 P-Channel 40V 180A Transistors

China Integrated Circuit Chip IPB180P04P403ATMA2 P-Channel 40V 180A Transistors on sale
...Channel 40V 180A Transistors Product Description Of IPB180P04P403ATMA2 IPB180P04P403ATMA2 is a P-Channel 40 V 180A (Tc) 150W (Tc) Transistors Surface Mount PG-TO263-7-3. Specification Of IPB180P04P403ATMA2 Part Number IPB180P04P403ATMA2 Transistor Polarity: P-Channel Number of Channels: 1 Channel......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

IPB017N10N5LFATMA1 MOSFET N-CH 100V 180A TO263-7 Support BOM Quotation

China IPB017N10N5LFATMA1 	  MOSFET N-CH 100V 180A TO263-7 Support BOM Quotation on sale
... products transistor FET, MOSFET single FET, MOSFET manufacturer Infineon Technologies series OptiMOS™-5 FET type N-channel technology MOSFET (metal oxide) Leakage source voltage (Vdss) 100 V Current at 25 ° C - Continuous drain (Id) 180A(Tc) Drive ......
DINGCEN INTERNATIONAL (HK) LIMITED

Address: 5A35, Building 205, Shangbu Industrial Zone, Futian District, Shenzhen, Guangdong

P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

China P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free on sale
IRF5210PBF P-Channel 100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

IRFB4110PBF Discrete Semiconductors Transistors For Circuit Protection

China IRFB4110PBF Discrete Semiconductors Transistors For Circuit Protection on sale
Product Range Field Effect Transistor Semiconductors Discrete Semiconductors Transistors MOSFET IRFB4110PBF MOSFET MOSFT 100V 180A 4.5mOhm 150nC TO-220-3 N-Channel App Characteristics Features High Efficiency Synchronous Rectification in SMPS ......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

100v 180a Diode Electronic Component IPB180N10S402ATMA1 MOSFET N-CH TO263-7

China 100v 180a Diode Electronic Component IPB180N10S402ATMA1 MOSFET N-CH TO263-7 on sale
... (CT) Digi-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On...
J&T ELECTRONICS LTD

Address: ROOM32 11/F LEE KA INDUSTRIAL BUILDING,8 NG FONG STREET SAN PO KONG, KL, HONGKONG.

N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF

China N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF on sale
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined......
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

China P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free on sale
IRF5210PBF P-Channel 100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

IC Sample Discount TLE4206-2G IPB031NE7N3G IPD35N10S3L26ATMA1

China IC Sample Discount TLE4206-2G IPB031NE7N3G IPD35N10S3L26ATMA1 on sale
... current up to 180A MSL1 peak return temperature up to 260°C Low switching power and conduction power losses for high thermal efficie Product Specifications Part Number: IPD35N10S3L26ATMA1 Mounting Style: SMD/SMT Transistor Polarity: N-Channel Vds - Drain......
Shenzhen Tengshengda ELECTRIC CO., LTD.

Address: 609 No. 4018, baoan Road, Xixiang Street, Baoan District, Shenzhen, Guangdong

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