NE3503M04-T2B-A Field Effect Transistor Transistors FETs MOSFETs RF Chip
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NE3503M04-T2B-A Specifications Part Status Last Time Buy Transistor Type HFET Frequency 12GHz Gain 12dB Voltage - Test 2V Current Rating 70mA Noise Figure 0.45dB Current - Test 10mA Power - Output - Voltage - Rated 4V Package / Case 4-SMD, Flat Leads ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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NE3503M04-A
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RF Mosfet 2 V 10 mA 12GHz 12dB M04...
KANG DA ELECTRONICS CO.
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NE3503M04-T2-A
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RF Mosfet 2 V 10 mA 12GHz 12dB M04...
Shenzhen Wonder-Chip Electronics Company Limited
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NE3503M04-T2B-A
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RF Mosfet 2 V 10 mA 12GHz 12dB M04...
Beijing Silk Road Enterprise Management Services Co.,LTD
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NE3503M04-T2B-A
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RF Mosfet 2 V 10 mA 12GHz 12dB M04...
Beijing Silk Road Enterprise Management Services Co.,LTD
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