NE3516S02-T1C-A
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RF Mosfet 2 V 10 mA 12GHz 14dB 165mW S02...
KANG DA ELECTRONICS CO.
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NE3516S02-T1C-A
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RF Mosfet 2 V 10 mA 12GHz 14dB 165mW S02...
Shenzhen Wonder-Chip Electronics Company Limited
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NE3516S02-T1C-A
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RF Mosfet 2 V 10 mA 12GHz 14dB 165mW S02...
Beijing Silk Road Enterprise Management Services Co.,LTD
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NE3516S02-T1C-A
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RF Mosfet 2 V 10 mA 12GHz 14dB 165mW S02...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
NE3515S02-T1C-A Field Effect Transistor Transistors FETs MOSFETs RF Chip
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NE3515S02-T1C-A Specifications Part Status Last Time Buy Transistor Type HFET Frequency 12GHz Gain 12.5dB Voltage - Test 2V Current Rating 88mA Noise Figure 0.3dB Current - Test 10mA Power - Output 14dBm Voltage - Rated 4V Package / Case 4-SMD, Flat Leads ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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