FGL40N120AND 40A 1200V Welding Machine IGBT Single Tube NPT TO-264
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FGL40N120AND 40A 1200V Welding Machine IGBT Single Tube NPT TO-264 Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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FGL40N120ANDTU 40A 1200V Welding Machine IGBT Single Tube NPT TO-264
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FGL40N120AND 40A 1200V Welding Machine IGBT Single Tube NPT TO-264 Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating......
ChongMing Group (HK) Int'l Co., Ltd
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Single IGBTs Transistors IXBK64N250 Integrated Circuit Chip TO-264-3 Transistors
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...Transistors IXBK64N250 Integrated Circuit Chip TO-264-3 Transistors Product Description Of IXBK64N250 IXBK64N250 is 2500V, 75A, 735W High Voltage, High Gain BiMOSFET, Monolithic Bipolar MOS IGBTs Transistor. Specification Of IXBK64N250 Part Number IXBK64N250 Voltage - Collector Emitter Breakdown (Max) 2500 V Current - Collector (Ic) (Max) 75 A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 64A Power......
ShenZhen Mingjiada Electronics Co.,Ltd.
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FGA25N120ANTD Power Switching IGBT Power Transistor 1200V 40A 310W TO3P
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FGA25N120ANTD Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as ......
Shenzhen Retechip Electronics Co., Ltd
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
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... Recovery Diode General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for...
Shenzhen Koben Electronics Co., Ltd.
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MJL21193 MJL21194 Transistor MJL21193 MJL21194 MJL21194G Pair Audio Power Amplifier Transistor 250V 16A TO-264 Original New
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... Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A, 5V Power - Max 200W Frequency - Transition 4MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO...
Shenzhen Quanyuantong Electronics Co., Ltd.
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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
Anterwell Technology Ltd.
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ARF466BG Field Effect Transistor Transistors FETs MOSFETs RF Chip
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... Active Transistor Type N-Channel Frequency 40.68MHz Gain 16dB Voltage - Test 150V Current Rating 13A Noise Figure - Current - Test - Power - Output 150W Voltage - Rated 1000V Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 Shipment UPS......
KZ TECHNOLOGY (HONGKONG) LIMITED
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FGD3N60UNDF Discrete Semiconductor Products IGBT NPT 600V 6 A 60W Surface Mount TO-252AA
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FGD3N60UNDF IGBT NPT 600 V 6 A 60 W Surface Mount TO-252AA Datasheet:FGD3N60UNDF Category Single IGBTs Mfr onsemi Product Status Obsolete IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 6 A Current - Collector......
Shenzhen Zhaocun Electronics Co., Ltd.
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