6inch Dia 150mm 350um Thickness 4H N Type SiC Substrate For SBD MOS Application
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... substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers what is SiC subatrate A SiC substrate refers to a wafer made of...
SHANGHAI FAMOUS TRADE CO.,LTD
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6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
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...SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic About Silicon Carbide (SiC)Crystal Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates......
SHANGHAI FAMOUS TRADE CO.,LTD
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SI type SiC ingot manufacturer sell semi-insulating sic wafer
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...type SiC ingot manufacturer sell semi-insulating sic wafer HMT as the leading supplier and manufacturer of SiC ingot, our SiC crystal ingot have 4 inch and 6 inch with N type and SI type. Quality SiC Substrate Supplier & Manufacture in China, Contact Now! Quality Assurance. Semi-insulating silicon carbide substrates are mainly used in gallium nitride rf devices. By growing gan epitaxy layer on semi-insulating silicon carbide substrate......
Homray Material Technology
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6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
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...6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd
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1625c Double Spiral SGR Type Sic Heating Element For Various Furnaces
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...% Color Black Resistence Uniform resistance Power Adjustable Working temperature up to 1625C Recommend Products SGR Type Double spiral type sic heater could max reach 1625 ℃ SG Type Single spiral type sic heater could max reach 1625 ℃ U Type Ideal for...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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M Type SiC Heating element
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... time at high temperatures, and due to the oxidation of the SiC surface, the SiO2 content in the components gradually increases, causing an increase in their resistance. This is a normal phenomenon called "aging". During the first 500 ......
ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD
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Double Spiral SGR Type Sic Heater Elements 1625°C For Furnaces
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...Type Sic Heating Element For Various Furnaces Description Highlight: SGR Type Sic Heating Element , Various Furnaces Sic Heating Element , Double Spiral Sic Heating Element Product Description Specification Material Silicon Carbide Powder Voltage 220 volts, 380 volts, 110 volts Shapes U Shape', W Shape, Spiral Shape, Straight Type, L Type, etc SiC......
Shaanxi KeGu New Material Technology Co., Ltd
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Automotive IGBT Modules MSCSM170HRM11NG T-Type SiC MOSFET Power Module
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Automotive IGBT Modules MSCSM170HRM11NG T-Type SiC MOSFET Power Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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U Type Sic Rod Heating Elements High Temperature For Industrial Furnace
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Product Description Basic Info. Parameter Details Parameter Details Model NO. SIC rod Material Silicon Carbide Form Spiral Heating Element Shape Round Name Silicon Carbide Rods Size 5-60mm Length 4500mm Max. Power 500-10000W Heating Element Silicon Carbon/......
Huona (Shanghai) New Material Co., Ltd.
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