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Power Consumption Low Rds On Mosfet

1-10 Results for

power consumption low rds on mosfet

from 40 Products

Silicon Loss Low Rds On Mosfet For Power Consumption In Advanced Applications

China Silicon Loss Low Rds On Mosfet For Power Consumption In Advanced Applications on sale
... for different system designs. Its low Rds(ON) resistance ensures efficient power transfer, reducing power loss and heat dissipation. Our Low Voltage MOSFET is an ideal solution for applications requiring high efficiency and low power consumption....
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

AO6401A MOSFET Power Electronics - Low RDS(On) And High Performance

China AO6401A MOSFET Power Electronics - Low RDS(On) And High Performance on sale
... • RoHS Compliant Product Specifications: • Drain-Source Voltage (VDS): 20V • Drain-Source On-Resistance (RDS(ON)): 0.8 Ohm • Gate-Source Voltage (VGS): -4.5V to -5.5V • Continuous Drain Current (ID): 5.2A • Maximum Power Dissipation (PD):...
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

High EAS Capability Low Rds(ON) Trench Process MOSFET Synchronous Rectification

China High EAS Capability Low Rds(ON) Trench Process MOSFET Synchronous Rectification on sale
...low voltage MOSFET is a semiconductor device that has become an indispensable component in modern electronic circuits. It is designed to operate at low power levels while maintaining high efficiency and performance. The low voltage power MOSFET is specifically created to address the needs of applications where low power consumption is critical. With its low power loss feature, this MOSFET......
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications

China IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications on sale
...Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low......
TOP Electronic Industry Co., Ltd.

Address: RM1441,GUO LI Bldg,ZhongHang RD.,Futian Dist.Shen Zhen,China

Custom Made Mosfet Power Transistor Low ON Resistance AP15N10D

China Custom Made Mosfet Power Transistor Low ON Resistance AP15N10D on sale
...Mosfet Power Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching power supplies DC-DC converters Low voltage motor control Mosfet Power Transistor Description: The AP15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

China RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS on sale
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power......
Beijing Silk Road Enterprise Management Services Co.,LTD

T8 40V SMD / SMT Mosfet Power Transistor Low Coss 155A Continuous Leakage Current

China T8 40V SMD / SMT Mosfet Power Transistor Low Coss 155A Continuous Leakage Current on sale
Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet

China BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet on sale
... level ·Excellent gate charge x RDs(on)product (FOM) · Very low on-resistance RDs(on) ·150 C operating temperature · Pb-free lead plating; RoHS compliant ·Qualified according to JEDEC1) for target application · Halogen-......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Hightest Frequency Safety And Efficiency Heating Equipment Low Power Consumption

China Hightest Frequency Safety And Efficiency Heating Equipment Low Power Consumption on sale
...Low Power Consumption Safety And Efficiency Heating Equipment Introduction: 1. Adopting European MOSFET, IGBT solid-state power module and advanced resonant inverter technology, with high efficiency and high output power, saving energy; 2. High frequency, heated quickly, its power consumption......
DONGGUAN YUYANG INSTRUMENT CO.,LTD

Address: 1207 International Commercial Building, No.81, Hongfu West Road, Nancheng District, Dongguan City, Guangdong Province, China

FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

China FDN304PZ  P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet on sale
...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS(ON) and 30% higher power......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

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