SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation
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... Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)...
Guangdong Uchi Electronics Co.,Ltd
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Original New IRLR2905TRPBF MOSFET Power Electronics Transistor
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...Transistor 2. Part Number: IRLR2905TRPBF 3. Package Type: TO-220 4. Configuration: Single 5. Voltage: 100V 6. Current: 8A 7. Power Dissipation: 20W 8. Operating Temperature Range: -55°C to +150°C 9. Mounting Style: Through Hole 10. Transistor Polarity: N-Channel Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic......
Shenzhen Sai Collie Technology Co., Ltd.
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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
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...Transistors D882 TRANSISTOR (NPN) FEATURE Power dissipation Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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BCX56-16,147 Power Mosfet IC Transistor NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
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... NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and Storage......
ChongMing Group (HK) Int'l Co., Ltd
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BCX56 Power Mosfet IC Transistor NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
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... NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and Storage......
Anterwell Technology Ltd.
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Transistor / Integrated Circuit IC 1.25W Power dissipation 2SD822 / D822
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...-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Collector Power Dissipation 1.25 W TJ Junction Temperature 150 °C Tstg Storage Temperature -55-150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise...
Shenzhen Winsun Technology Co., Ltd.
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Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation
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... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
Shenzhen Weitaixu Capacitor Co.,Ltd
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RF Power Transistors MRF21090 RF Power Field Effect Transistors MOT RF Power Transistors
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MRF21090 is a RF Power Field Effect Transistor. Part NO: MRF21090 Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely......
Mega Source Elec.Limited
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Automotive IGBT Modules FP35R12W2T7B11 1200V 35A 20mW Medium Power Single IGBT Transistors Module
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... + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of...
ShenZhen Mingjiada Electronics Co.,Ltd.
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TO-220C Low Power Mosfets Electronic Devices Improved System Efficiency
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...Power Mosfets Electronic Devices Improved System Efficiency Product Description: Our Low Voltage MOSFET boasts of a low on-resistance, which is essential in minimizing power losses and improving system efficiency. With this feature, this product can handle high currents with minimal power dissipation, making it ideal for power management, motor control, and other high-power......
Guangdong Lingxun Microelectronics Co., Ltd
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