RF Power Transistors BLC6G22-75 Power LDMOS transistor RF Power Transistors
|
BLC6G22-75 is a Power LDMOS transistor. Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
|
PB Free NPN PNP Transistor TPS62141RGTR Power LDMOS Transistor
|
...Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power......
Yingxinyuan Int'l(Group) Ltd.
|
BLF188XR Electronic Component SOT539A BLF188X R Power LDMOS transistor BLF188 XR BLF 188XR BL F188XR B LF188XR
|
#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root .......
ShenZhen QingFengYuan Technology Co.,Ltd.
|
Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
|
Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
VBE Technology Shenzhen Co., Ltd.
|
MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4
|
MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ......
Shenzhen Koben Electronics Co., Ltd.
|
MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors
|
... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •...
Anterwell Technology Ltd.
|
J201 JFET N-Channel Transistor General Purpose high power rf transistors
|
...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power......
Wisdtech Technology Co.,Limited
|
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
|
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
TPS2330IPWR Mosfet Power Transistor Programmable Power Amp Transistor
|
...POWER AMP TRANSISTOR TPS2330IPWR WITH CIRCUIT BREAKER Type: Hot Swap Controller Applications: General Purpose Programmable Features: Circuit Breaker, Fault Timeout, Slew Rate Voltage - Supply: 3V ~ 13V High Light: high power mosfet transistors , n channel mosfet transistor TPS2330IPWR Hot Swap Controller with circuit breaker and power......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|