Power LDMOS transistor BLF188XR NXP SOT-539A New and Original in stock
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Power LDMOS transistor BLF188XR NXP SOT-539A New and Original in stock Transistor Type LDMOS (Dual) Frequency 10MHz ~ 600MHz Gain 24.4dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 40mA Power - Output 1400W Voltage - Rated 50V Package / Case SOT539A Features and benefits Easy power......
Mega Source Elec.Limited
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BC817-25 npn general purpose transistor Power Mosfet Transistor SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN)
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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E ......
Anterwell Technology Ltd.
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PB Free NPN PNP Transistor TPS62141RGTR Power LDMOS Transistor
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NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light ......
Yingxinyuan Int'l(Group) Ltd.
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BC817-25 npn general purpose transistor Power Mosfet Transistor SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN)
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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E ......
ChongMing Group (HK) Int'l Co., Ltd
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BLF188XR Electronic Component SOT539A BLF188X R Power LDMOS transistor BLF188 XR BLF 188XR BL F188XR B LF188XR
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ShenZhen QingFengYuan Technology Co.,Ltd.
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
VBE Technology Shenzhen Co., Ltd.
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MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4
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MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ......
Shenzhen Koben Electronics Co., Ltd.
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MMDT3946DW DUAL NPN and PNP Transistor SOT-363 for Low Power Amplification
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... Planar Die Construction Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage ......
Guangdong Huixin Electronics Technology Co., Ltd.
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NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package
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NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (......
Shenzhen Sai Collie Technology Co., Ltd.
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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
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SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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