KSD1408YTU Power MOSFET 100A Current 3.8mΩ Low Rds(on) Fast Switching High Efficiency 150°C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free & RoHS Compliant
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...Power MOSFET 100A Current 3.8mΩ Low Rds(on) Fast Switching High Efficiency 150°C Rating Ultra-Low Gate Charge Superior dv/dt Ruggedness Halogen-Free & RoHS Compliant Features 1:Ultra-Low On-Resistance (3.8mΩ): Minimizes conduction losses for higher system efficiency and reduced heat generation 2:High Current Capability (100A): Supports power-intensive applications including motor drives and power......
TOP Electronic Industry Co., Ltd.
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IRFR3710ZTRLPBF Common Power Mosfet High Speed Switching Low On Resistance
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...RoHS Compliant Product Specifications: • VDS (V): 100V • ID (A): 13A • RDS(on) (mΩ): 4.8mΩ • VGS (V): -20V • Qg (Max) (nC): 27nC • Power Dissipation (W): 11.4W • Operating Temperature (°C): -55°C ~ 175°C Product Status Active FET Type N...
Shenzhen Sai Collie Technology Co., Ltd.
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JY09M N Channel Enhancement MOS IC TO-220 70V 90A Power MOSFET
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Genernal Description: The JY09M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for ......
Changzhou Junqi International Trade Co.,Ltd
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FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench
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...Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench Features Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power......
ChongMing Group (HK) Int'l Co., Ltd
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Integrated Circuit Chip PSMN4R8-100BSE N-channel 100V 4.8mΩ Transistors
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...'s "Next Power Live"portfolio,the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up...
ShenZhen Mingjiada Electronics Co.,Ltd.
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NCP161AFCT180T2G onsemi
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...Power MOSFET Drain-Source Breakdown Voltage: 180V Continuous Drain Current per Channel: 15A On-Resistance per Channel: 1.8mΩ (max) Operating Temperature: -55°C to 175°C Package: Power SO-16 The NCP161AFCT180T2G is a dual N-channel power MOSFET from ON Semiconductor. Key Features: Integrated dual switch capable of 15A per channel Industry-leading low 1.8mΩ RDS...
ZhongHao Industry Limited
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