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Power Switching Igbt Power Transistor

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power switching igbt power transistor

from 2246 Products

FGA25N120ANTD Power Switching IGBT Power Transistor 1200V 40A 310W TO3P

China FGA25N120ANTD Power Switching IGBT Power Transistor 1200V 40A 310W TO3P on sale
...Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • High speed switching......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Automotive IGBT Modules FP35R12W2T7B11 1200V 35A 20mW Medium Power Single IGBT Transistors Module

China Automotive IGBT Modules FP35R12W2T7B11 1200V 35A 20mW Medium Power Single IGBT Transistors Module on sale
Automotive IGBT Modules FP35R12W2T7B11 1200V 35A 20mW Medium Power Single IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage

China 2MBI100N 060 Power Switching IGBT Power Module  Low Saturation Voltage on sale
...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( ~3 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply Description 1. IGBT......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

China Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode on sale
...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole

China TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole on sale
...-emitter voltage and a 3.9V maximum collector-emitter saturation voltage. IXYS IXYT30N450HV and IXYH30N450HV IGBTs offer a low gate drive requirement and 430W power density. The series is ideal for use in switch-mode and resonant-mode power supplies as...
HongKong Wei Ya Hua Electronic Technology Co.,Limited

Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen

Charging Pile Inverter IGBT Transistor Multipurpose For OBC

China Charging Pile Inverter IGBT Transistor Multipurpose For OBC on sale
...IGBT Transistor Multipurpose For OBC Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Trench and field-stop technology • Low collector to emitter saturation voltage • High speed switching Motor drives • Easy parallel switching capability • Short circuit withstands time • High ruggedness performance Positive temperature coefficient • Fast Switching......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

IKW25T120 Through Hole IGBT Transistor IC Chip LOW LOSS DuoPack 1200V 25A

China IKW25T120 Through Hole IGBT Transistor IC Chip LOW LOSS DuoPack 1200V 25A on sale
...IGBT Transistors LOW LOSS DuoPack 1200V 25A ●Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D ●Short circuit withstand time – 10s ●Designed for : - Frequency Converters - Uninterrupted Power Supply ●TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior ●NPT technology offers easy parallel switching...
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V

China Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V on sale
Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules ......
Shenzhen Wisdomlong Technology CO.,LTD

Address: 23E BlockB,Lushan Building,Chunfeng Road,Luohu District,Shenzhen,518001,China

Industrial Eupec High Power IGBT Module FS150R12KE3 IGBT Transistors Module

China Industrial Eupec High Power IGBT Module FS150R12KE3 IGBT Transistors Module on sale
...IGBT Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :Metal Package Package Outline: Flat Shape Shutdown speed: ordinary Cooling function: heat sink Description: EconoPACK ™ 3 1200V sixpack IGBT module with IGBT3 and NTC Features Description: High power......
Guangzhou Sande Electric Co.,Ltd.

Address: 10/F,Jia Yue Building, Chebei Road,Tianhe district,Guangzhou,China

IHW40N60RF Power Module IGBT 600V 80A 305W TO247-3 Package Infineon Technologies

China IHW40N60RF Power Module IGBT 600V 80A 305W TO247-3 Package Infineon Technologies on sale
...IGBT Power Module Transistors IGBTs Single IHW40N60RF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A Power - Max 305W Switching......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

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