FGA25N120ANTD Power Switching IGBT Power Transistor 1200V 40A 310W TO3P
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...Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • High speed switching......
Shenzhen Retechip Electronics Co., Ltd
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Integrated Circuit Chip IKW30N60H3FKSA1 Hard-Switching IGBT Transistors Co-Packed With Free-Wheeling Diode
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Integrated Circuit Chip IKW30N60H3FKSA1 Hard-Switching IGBT Transistors Co-Packed With Free-Wheeling Diode [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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2MBI100N 060 Power Switching IGBT Power Module Low Saturation Voltage
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...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( ~3 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply Description 1. IGBT......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
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...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching......
Shenzhen ATFU Electronics Technology ltd
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FP150R07N3E4_B11 IGBT Transistor Module High Power Practical
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...Power IGBT Module Boost Your Electronics Project with the FP150R07N3E4_B11 The FP150R07N3E4_B11 is a high-power IGBT module that is perfect for boosting your electronics project. With a powerful output of 150A and 650V, this IGBT module can handle high-power applications with ease. Here are some of the pros and cons of the FP150R07N3E4_B11: Pros: - High power output makes it ideal for demanding applications - High switching......
Yougou Electronics (Shenzhen) Co., Ltd.
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127
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...Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching......
Anterwell Technology Ltd.
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TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole
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...-emitter voltage and a 3.9V maximum collector-emitter saturation voltage. IXYS IXYT30N450HV and IXYH30N450HV IGBTs offer a low gate drive requirement and 430W power density. The series is ideal for use in switch-mode and resonant-mode power supplies as...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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APT25GT120BRG Discrete Semiconductors TO-247-3 IGBT Transistors
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...IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Application: • Low Forward Voltage Drop • High Freq. Switching......
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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Charging Pile Inverter IGBT Transistor Multipurpose For OBC
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...IGBT Transistor Multipurpose For OBC Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Trench and field-stop technology • Low collector to emitter saturation voltage • High speed switching Motor drives • Easy parallel switching capability • Short circuit withstands time • High ruggedness performance Positive temperature coefficient • Fast Switching......
Guangdong Lingxun Microelectronics Co., Ltd
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IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor
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...: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V ......
Angel Technology Electronics Co
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