2SC5508-T2B NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION led circuit board
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2SC5508-T2B NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19......
ChongMing Group (HK) Int'l Co., Ltd
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RF Microwave Components Low Noise Amplifier Gain 28dB 3.1GHz 3.5GHz
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3.1 3.5GHz Low Noise Amplifier,Gain 28dB, SMA connector Electrical Specifications Frequency Range 3.1 – 3.5GHz Gain 28±0.6dB Gain Flatness ≤±0.6dB Noise Figure 0.7dB typ., ≤0.9dB VSWR ≤1.40 P-1dB ≥+7dBm Input Power ≤20dBm Phase Match ≤±8.0° Power Supply +......
Chengdu Zysen Technology Co., Ltd.
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Compact N Channel JFET onsemi 2SK3557 7 TB E for AM tuner RF amplification and low noise applications
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..., and an ultralow noise figure.Product Attributes Brand: onsemi Origin: Semiconductor Components Industries, LLC Package: CP (SC-59, TO-236, ......
Hefei Purple Horn E-Commerce Co., Ltd.
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1GHz-2GHz L-Band uHF RF Amplifier Module Low Noise High Stability
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Drone UAV GPS WiFi-5.8g 50W RF Signal Jammer Module Product Description RF Power Amplifier Module Our RF Power Amplifier Module is designed to provide efficient, high-power RF jamming capabilities in a compact form factor. With a VSWR of 1.5:1, an ......
Pinnacle Technology Co., Limited
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70–6000MHz Programmable RF Signal Module Low Noise For Counter UAS
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70–6000MHz Programmable RF Signal Module for Counter-UAS Product Introduction The Digital RF Source Module is a programmable wideband signal generation unit designed for multi‑band jamming systems operating in complex electromagnetic environments. It is ......
Roviyno Intelligent Technology Co., Limited
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ILC7083AIM533X Low dropout regulator 150ma CMOS RF-LDO Ultra Low Noise
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Manufacturer: onsemi Product category: low dropout regulator Installation style: SMD/SMT Package/box: SOT-23-5 Output voltage: 3.3 v. Output current: 500 mA Number of output terminals: 1 Output Polarity: Positive Input voltage-min: 2 V Input voltage-max: ......
Shenzhen Hefengxin Technology Co., Ltd.
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1-3000MHz 2.4GHz 20dB 0.01-2000MHz 2Ghz 32dB LNA RF Wideband Broadband Low Noise Power Amplifier Module UHF HF VHF
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Electrical Characteristics: 1.6W RF AMPLIFIER (500MHZ/30DB) 1. Product application: BROADBAND RF POWER AMPLIFICATION, SUITABLE FOR ALL KINDS OF RADIO APPLICATIONS, SHORT-WAVE FM REMOTE CONTROL TOYS RADIO WALKIE-TALKIE, DATA RADIO, ETC., INPUT 1 MILLIWATT (......
Zhangjiagang RY Electronic CO.,LTD
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DEC MURF1040 Ultra Fast Recovery Rectifier Diode 3.5A IRM Low Noise Switching
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... voltage peaks for reduced protection circuits Low noise switching APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in...
Shenzhen Canyi Technology Co., Ltd.
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Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain
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2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio......
VBE Technology Shenzhen Co., Ltd.
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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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...RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low noise......
Mega Source Elec.Limited
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