N Type , Te-Doped GaSb Wafer , 2”, Prime Grade , Epi Ready
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...Doped GaSb Wafer , 2”, Prime Grade , Epi Ready PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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2" S Doped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes
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2” S Dopped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes Description: Gallium phosphide (GaP) is a group Ⅲ-V compound. The appearance is orange-......
SHANGHAI FAMOUS TRADE CO.,LTD
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4" 5mol% MgO Dope LiNbO3 Wafer For Optical Applications Optimize Your Research And Manufacturing Process
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...material engineering, blending the inherent strengths of Lithium Niobate with the enhancing effects of Magnesium Oxide doping. This precise 5% addition of MgO significantly alters the properties of the wafer, enhancing its resistance to optical damage and...
Hangzhou Freqcontrol Electronic Technology Ltd.
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Conductive Nb Doped SrTiO3 Wafer Technical Ceramic Parts 5 X 5 Mm Diameter 25Mm
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SrTiO3 Wafer and conductive Nb doped SrTiO3 wafer with size from 5 x 5 mm to diameter 25 mm We can provide both single crystal SrTiO3 wafer and conductive Nb doped SrTiO3 wafer with size from 5 x 5 mm to diameter 25 mm . With excellent physical and ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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4 inch GaN-on-Si epi wafer manufacturer for Power HEMT
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... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, DC/DC ......
Homray Material Technology
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Yellow Black Fe2O3 Doped LiTaO3 Wafer Used For Photorefractive
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... damage threshold. Fe doped congruent LiTaO3 were grown by Czochralski method. By doping different concentrations of Fe2O3 in LiTaO3 crystal, Test results show that the lattice constant increases with the increase of Fe2O3 content. This result indicates a...
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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N-InP Substrate Bandwidth 02:2.5G Wavelength 1270nm Epi Wafer For FP Laser Diode
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N-InP substrate bandwidth 02:2.5G wavelength 1270nm epi wafer for FP laser diode N-InP substrate FP Epiwafer's Overview Our N-InP Substrate FP Epiwafer is a high-performance epitaxial wafer designed for the fabrication of Fabry-Pérot (FP) laser diodes, ......
SHANGHAI FAMOUS TRADE CO.,LTD
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M10 Wafer Solar Panel For Ultra Large Power Plant Superior Module 555W 144 Half Cell
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...wafer Solar Panel for ultra-large power plant or distributed projects superior module efficiency 555W 144 half cell MONO-FACIAL MODULE P-Type /Positive power tolerance of 0~+3%/Max module efficiency 21.48% 1. Suitable for ground power plantsand distributed projects 2. Advanced module technology deliverssuperior module efficiency Gallium-doped Wafer......
Beijing MITSCN Co., Ltd.
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A Plane Sapphire Semiconductor , Transparent 2 Inch DSP Wafer
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A Plane Sapphire Semiconductor What Is A-Plane Sapphire? The plane that is perpendicular to the A-axis, containing the C-axis. A-plane Sapphire orientations are widely used in optoelectronic applications. How do Researchers Use A-Plane Sapphire Substrates......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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Tungsten And Molybdenum Products Ion Implantation Source
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... dope wafers with foreign atoms to modify material properties such as conductivity or crystal structure. The beam path is the center of an implanter system. Here the ions are generated, concentrated, greatly accelerated, and focused on the wafer at very......
JINXING MATECH CO LTD
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