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Samsung Synchronous Dram Sdram Chips

1-10 Results for

samsung synchronous dram sdram chips

from 35 Products

MT48LC32M8A2 Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM

China MT48LC32M8A2 Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM on sale
... Features • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

MT48LC32M8A2FB-75:D TR Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM

China MT48LC32M8A2FB-75:D TR Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM on sale
... Features • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

MT48LC4M16A2TG Synchronous Dram IC MICRON TSOP4 Meg X 4 X 4 Banks

China MT48LC4M16A2TG Synchronous Dram IC MICRON TSOP4 Meg X 4 X 4 Banks on sale
...Synchronous Dram MICRON Original Package TSOP Tray MT48LC16M4A2 – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P

China PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P on sale
...chips IC DRAM 4GBIT PARALLEL Integrated circuit Flash memory EEPROM DDR EMMC MT41K256M16TW-107 I MT41K256M16TW-107 IT:P DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM......
ShenZhen QingFengYuan Technology Co.,Ltd.

Address: Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

AS4C Alliance Memory SRAM DRAM SDRAM IC Chip Electronics Components

China AS4C Alliance Memory SRAM DRAM SDRAM IC Chip Electronics Components on sale
...DRAM SDRAM IC Chip AS4C1M16S-6TCN AS4C4M16SA-5 About Alliance Memory, Inc. Alliance Memory, Inc. is a worldwide provider of LEGACY memory products for the communications, computing, industrial and consumer markets. The company supports a full range of 3.3 V and 5 V asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; synchronous......
Angel Technology Electronics Co

Address: FL16 Coastal Buidling East Block Nanshan District Shenzhen China 518000

8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

China 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD on sale
Dynamic Random Access Memory DRAM 8Gb C-die DDR4 SDRAM K4A8G165WC-BITD JEDEC standard 1.2V(1.14V-1.26V) VDDo = 1.2V(1.14V-1.26V) VPp=2.5V(2.375V-2.75V) 800 MHz fek for 1600Mb/sec/pin, 933 MHz fek for 1866Mb/sec/pin,1067MHz fck for 2133Mbsec/pin, 1200MHz ......
Shenzhen Filetti Technology Co., LTD

Address: Room E, 22nd Floor, Block B, Duhui 100 Building, Huaqiangbei Subdistrict, Futian District, Shenzhen City

SRAM DRAM SDRAM IC Electronic Components AS4C Alliance Memory

China SRAM DRAM SDRAM IC Electronic Components AS4C Alliance Memory on sale
Product Description AS4C Alliance Memory SRAM DRAM SDRAM IC Chip Electronics Components Alliance Memory SRAM DRAM SDRAM IC Chip AS4C1M16S-6TCN AS4C4M16SA-5 About Alliance Memory, Inc. Alliance Memory, Inc. is a worldwide provider of LEGACY memory products......
Guangzhou Topfast Technology Co., Ltd.

Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province

Programmable CAS 128M DDR3 Synchronous DRAM H5TC2G63GFR-PBA

China Programmable CAS 128M DDR3 Synchronous DRAM H5TC2G63GFR-PBA on sale
... Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock....
Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips

China MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips on sale
MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips MT41K256M8DA-107:K Flash Memory Chips Product Description: The MT41K256M8DA-107:K Flash Memory Chips is a high-performance memory designed for embedded applications. It offers......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

MT41K128M16JT-125 Dram Memory Chips DDR2 1Gbit 64MX16 400MHz 400 Ps FBGA-84

China MT41K128M16JT-125 Dram Memory Chips DDR2 1Gbit 64MX16 400MHz 400 Ps FBGA-84 on sale
...Dram memory chips DDR2 1Gbit 64MX16 400 MHz 400 ps FBGA-84 Specifications Product Attribute Attribute Value FBGA Code: D9RZH Data Bus Width: 16 bit Organization: 64 M x 16 Memory Size: 1 Gbit Maximum Clock Frequency: 400 MHz Supply Voltage - Max: 1.9 V Supply Voltage - Min: 1.7 V Supply Current - Max: 95 mA Minimum Operating Temperature: 0 C Maximum Operating Temperature: + 85 C Description The DDR2 SDRAM......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

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