N Type , Si-Doped GaAs(Gallium Arsenide) Substrate , 3”, Dummy Grade
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... crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4 Inch N Type 15° Semiconductor Substrate Si Doped GaAs Wafer SSP
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VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, -------------------------------------------------------------------------------------------------------------- (GaAs) Gallium ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
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...GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, 2inch N-Type Si-Doped un-doped GaAas Wafer Gallium Arsenide substrates -------------------------------------------------------------------------------------------------------------- GaAs) Gallium Arsenide Wafers Gallium arsenide (GaAs......
SHANGHAI FAMOUS TRADE CO.,LTD
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CVD Boron Doped Diamond Bdd Electrodes For Coating The Si/Niobium Substrate
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Boron Doped Diamond CVD Bdd Electrodes For Coating The Si/Niobium Substrate Specification Product name Boron Doped Diamond CVD Bdd electrodes for coating the Si/Niobium substrate Color Black Shape square, rectangle, round etc thickness 0.3mm-0.8mm Usage ......
Shaper Diamond Technology Co., Ltd
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CVD Boron Doped Diamond Bdd Electrodes For Coating The Si/Niobium Substrate
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Boron Doped Diamond CVD Bdd Electrodes For Coating The Si/Niobium Substrate Specification Product name Boron Doped Diamond CVD Bdd electrodes for coating the Si/Niobium substrate Color Black Shape square, rectangle, round etc thickness 0.3mm-0.8mm Usage ......
Shaper Diamond Technology Co., Ltd
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N156HRA-GAA 1920*1080 15.6 inch 250 cd/m2 40 pins LCD Screen
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N156HRA-GAA 1920*1080 15.6 inch 250 cd/m2 40 pins LCD Screen N156HRA-GAA LCD Panel Product details : Brand Innolux Model P/N N156HRA-GAA Diagonal Size 15.6" Panel Type a-Si TFT-LCD, LCM Resolution 1920(RGB)×1080, FHD 141PPI Pixel Format RGB Vertical ......
Shenzhen Yongsheng Innovation Technology Co., Ltd
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No Doped COC Czochralski 0.5mm Si Single Crystal Silicon Wafer
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...Si silicon single crystal Black amorphous silicon is obtained by the reduction of sand (SiO2) with carbon. Ultra-pure crystals if silicon have a blue-grey metallic sheen. Bulk silicon is un-reactive towards oxygen, water and acids (except HF), but dissolves in hot alkalis. Silicon is used in semiconductors, alloys and polymers. Material: silicon Doping type: No-doped......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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870MHz 25dB Gain CATV GaAs Power Doubler Amplifier Module
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... double amplifier module combined by Si RF and GaAs active devices; It is suitable to use in power amplifier of CATV transferring system; Operating frequency range is 40-870 MHz; Supplying ......
Hans Innovation Group
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
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...GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 25° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si......
Anterwell Technology Ltd.
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
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... • Angle of half intensity: ϕ = ± 25° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector TEFT4300 •...
ChongMing Group (HK) Int'l Co., Ltd
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